H2 sensing properties of modified silicon nanowires

作     者：Latefa Baba Ahmed Sabrina Naama Aissa Keffous Abdelkader Hassein-Bey Toufik Hadjersi 

作者机构：Département de physiqueUniversité Saad Dahlab de Blidaroute de Soumaa B.P. 270Blida 09000 Algeria Centre de Recherche en Technologie des Semi-conducteurs pour l’Energétique (CRTSE)2Bd.Frantz FanonB.P. 140 Alger-7 MerveillesAlgerAlgeria 

出 版 物：《Progress in Natural Science:Materials International》 (自然科学进展·国际材料(英文))

年 卷 期：2015年第25卷第2期

页      面：101-110页

核心收录：

学科分类：07[理学] 070205[理学-凝聚态物理] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0702[理学-物理学] 

基　　金：the financial support from General Direction of Scientific Research and Technological Development of Algeria (DGRSDT/MESRS) 

主　　题：Electroless chemical etching Noble metal H2sensor Silicon nanowires Morphology 

摘      要：It has been found that the silicon nanowires modified with noble metals can be used to fabricate an effective H2 gas sensor in the present *** preparation and surface modification of silicon nanowires(Si NWs) were carried out by chemical methods. The morphology of the silicon nanowires unmodified and modified with nanoparticles of platinum, palladium, silver and gold was investigated using scanning electron microscopy(SEM). The chemical composition of the silicon nanowire layers was studied by secondary ion mass spectroscopy(SIMS) and energy dispersive X-ray analysis(EDX). The structures of type metal/Si NWs/p-Si/Al were fabricated. The electrical characterization(I–V) was performed in primary vacuum and H2 at different concentrations. It was found that the metal type used to modify the Si NWs strongly influenced the I–V characteristics. The response of these structures toward H2 gas was studied as a function of the metal type. Finally, the sensing characteristics and performance of the sensors were investigated.