Microstructure of Electrodeposited Cu Micro-cylinders in High-Aspect-Ratio Blind Holes and Crystallographic Texture of the Cu Overburden Film

作     者：Yazhou Zhang Guifu Ding Hong Wang Ping Cheng 

作者机构：National Key Laboratory of Science and Technology on Micro/Nano Fabrication Department of Micro/Nano Electronics School of Electronic Informationand Electrical Engineering Shanghai Jiao Tong University Shanghai 200240 China 

出 版 物：《Journal of Materials Science & Technology》 (材料科学技术（英文版）)

年 卷 期：2016年第32卷第4期

页      面：355-361页

核心收录：

学科分类：07[理学] 070205[理学-凝聚态物理] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0702[理学-物理学] 

基　　金：sponsored by Chinese National Science and Technology Major Project (No. 2011ZX02702-003) 

主　　题：Cu micro cylinder electrodepositionElectron back scattered diffraction (EBSD)Crystallographic orientationCu overburden film 

摘      要：Microstructure and texture of electrodeposited Cu micro-cylinders in the blind hole play a vitally im- portant role in the electrical and mechanical properties of the three-dimensional （3-D） IC （integrated circuit）/Si integrations. In this paper, a new commercial additive system, which is specifically devel- oped for the high-aspect-ratio through-silicon-via （TSV） filling, was used to electrodeposit Cu in the blind holes. The microstructure of electrodeposited Cu micro-cylinder in the blind hole with a diameter of 40 μm and a depth of 140 μm was investigated by electron back-scattered diffraction （EBSD） technique. Grain size distribution of the Cu micro-cylinder in the blind hole differed from the bottom to the top. The grain boundaries contained a high fraction of Z3 CSL （coincident site lattice） boundaries. It has been reported that the Cu overburden film on the surface of the blind hole influenced the crystallographic orientation of Cu grains inside the damascene trench. So the effects of the current density and additive concentra- tion on the crystal structure of the overburden Cu film were also studied in this study. The experimental results indicated that the preferred orientation of the Cu overburden film changed from {111} to {220} when the current density increased from 2 to 80 mA cm-2. However, the effect of additives on the crystal structure of the Cu overburden film was dependent on the crystal structure of the seed layer.