Transition Gibbs free energy level cross section and formulation of carrier SRH recombination rate

作     者：Ken K.Chin 

作者机构：Department of Physics and CNBM New Energy Materials Research CenterNew Jersey Institute of Technology 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2013年第34卷第12期

页      面：9-12页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 07[理学] 070205[理学-凝聚态物理] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0702[理学-物理学] 

基　　金：support from CNBM (China National Building Materials) Group for its partial financial support of the work 

主　　题：transition Gibbs free energy level Shockley-Read-Hall single level defects 

摘      要：The transition among multiple charging states of a semiconductor＇s localized intrinsic/impurity defects is considered as phase transitions, and the concept of transition Gibbs free energy level （TGFEL） is proposed. Dependence of the cross section of TGFEL on its charge state is discussed. Introduction of TGFEL to replace acti- vation energy has fundamentally important consequences for semiconductor physics and devices. TGFEL involves entropy. What is to be included and not included in the entropy term consistently for all defect levels is an unre- solved open question, related to correct interpretation of various experimental data associated with various defect levels. This work is a first step towards resolving this question.