Microwave CVD Thick Diamond Film Synthesis Using CH4/H2/H2O Gas Mixtures
Microwave CVD Thick Diamond Film Synthesis Using CH_4/H_2/H_2O Gas Mixtures作者机构:Hubei Provincial Key Laboratory of Plasma Chemistry & Advanced MaterialsWuhan Institute of Technology Wuhan 430073 China Institute of Plasma Physics Chinese Academy of Sciences Hefei 230031 China Hubei Provincial Key Laboratory of Plasma Chemistry & Advanced Materials Wuhan Institute of Technology Wuhan 430073 China Hubei Provincial Key Laboratory of Plasma Chemistry & Advanced Materials Wuhan Institute of Technology Wuhan 430073 China Institute of Plasma Physics Chinese Academy of Sciences Hefei 230031 China
出 版 物:《Plasma Science and Technology》 (等离子体科学和技术(英文版))
年 卷 期:2006年第8卷第3期
页 面:329-332页
核心收录:
学科分类:08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程(可授工学、理学学位)]
基 金:Hubei Province Science and Technology Department with a Grant No. 2002AA105A02) the Team of Innovation of Hubei Province Education Department (2004) partly by the National Natural Science Foundation of China with a Grant No. 50572075
主 题:diamond film microwave Raman spectroscopy water
摘 要:Thick diamond films with a thickness of up to 1.2 mm and a area of 20 cm^2 have been grown in a homemade 5 kW microwave plasma chemical vapor deposition (MPCVD) reactor using CH4/H2/H2O gas mixtures. The growth rate, radial profiles of the film thickness, diamond morphology and quality were evaluated with a range of parameters such as the substrate temperature of 700℃ to 1100℃, the fed gas composition CH4/H2 = 3.0%, H2O/H2 = 0.0%,-2.4%. They were characterized by scanning electron microscopy and Raman spectroscopy. Translucent diamond wafers have been produced without any sign of non-diamond carbon phases, Raman peak as narrow as 4.1 cm^-1. An interesting type of diamond growth instability under certain deposition conditions was observed in a form of accelerated growth of selected diamond crystallites of a very big lateral size, about 1 mm, and of a better structure compared to the rest of the film.