STUDIES ON ION IMPLANTATION AND ELECTRICAL PROPERTIES OF POLYACETYLENE FILMS

作     者：林森浩 鲍锦荣 荣廷文 盛康龙 邹志宜 朱新芳 王玟珉 万洪和 沈之荃 杨慕杰 

作者机构：Shanghai Institute of Nuclear Research Academia Sinica Shanghai 201800 PRC Department of Chemistry Zhejiang University Hangzhou 310027 PRC 

出 版 物：《Science China Chemistry》 (中国科学（化学英文版）)

年 卷 期：1992年第35卷第1期

页      面：10-18页

核心收录：

学科分类：07[理学] 0703[理学-化学] 

基　　金：Project supported by the National Natural Science Foundation of China 

主　　题：polyacetylene ion implantation. 

摘      要：The effects of ion implantation on ployacetylene films PA have been studied with Ar^+, Fe^+, C1^+, I^+, Na^+ and K^+ ions in the energy range of 15—30 keV. The changes of PA films in the electrical conductivity, due to chemical doping and ion implantation in relation to their structure and depth profiles of impurities, were measured through infrared (ATR/FTIK), Rutherford backscattering spectrometry (RBS) and the four probe technique. In all cases, ion implantation of active ions exhibits the same effects as chemical doping. The formation of p-n junction is observed at the interface of implanted region and chemical doped PA substrate. The mechanism of interaction process between ion beam and polymer is also discussed.