Interfacial Electronic Structure of Thin Cu Films Grown on Ar^+-ion Sputter-cleaned α-Al_2O_3 Substrates

作     者：Christina Scheu, Min Gao and Manfred RuhleMax-Planck-Institut fur Metallforschung, Seestr. 92, 70174 Stuttgart, Germany [ Manuscript received October 17, 2001] 

作者机构：Max-Planck-Inst. für Metall. Seestr. 92 70174 Stuttgart Germany 

出 版 物：《Journal of Materials Science & Technology》 (材料科学技术（英文版）)

年 卷 期：2002年第18卷第2期

页      面：117-120页

核心收录：

学科分类：0817[工学-化学工程与技术] 0806[工学-冶金工程] 08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0703[理学-化学] 0802[工学-机械工程] 0801[工学-力学（可授工学、理学学位）] 0702[理学-物理学] 

基　　金：The authors wish to thank Dr. Wilhelm Stein and Dr. Thomas Wagner for providing the Cu/Al2O3 samples and helpful discus-sions Thanks to Ute Salzberger and Maria Sycha for their ex-cellent TEM specimen preparation. Stimulating discussions with Dr. Gerhard 

主　　题：Electronic structure Cu film Ion sputtering α-Al2O3 

摘      要：The bonding and electronic structure of Cu/(0001)Al2O3 and Cu/(1120)Al2O3 interfaces has been studied experimentally using spatially-resolved transmission electron energy loss spectroscopy. The specimen were prepared by depositing Cu on single-crystal α-AI2O3 substrates, which have been Ar+-ion sputter-cleaned prior to the growth of Cu. For both orientations of the α-Al2O3 substrate, atomically abrupt interfaces formed as determined by high-resolution transmission electron microscopy. The investigations of the interfacial Cu-L2,3, Al-L2,3 and 0-K energy loss near-edge structures, which are proportional to the site- and angular-momentum-projected unoccupied density of states above the Fermi level, indicate the existence of metallic Cu-AI bonds at the Cu/AI2O3 interface independent of the substrate orientation.