Temperature coefficients of grain boundary resistance variations in a ZnO/p-Si heterojunction
Temperature coefficients of grain boundary resistance variations in a ZnO/p-Si heterojunction作者机构:Department of PhysicsUniversity of Science and Technology of China
出 版 物:《Journal of Semiconductors》 (半导体学报(英文版))
年 卷 期:2010年第31卷第12期
页 面:11-15页
核心收录:
学科分类:0808[工学-电气工程] 0809[工学-电子科学与技术(可授工学、理学学位)] 08[工学] 0805[工学-材料科学与工程(可授工学、理学学位)] 0703[理学-化学] 0702[理学-物理学]
基 金:Project supported by the National Natural Science Foundation of China(Nos.50472009 10474091 50532070)
主 题:ZnO/p-Si heterojunction grain boundary temperature coefficients of grain boundary resistances intrinsicdefects
摘 要:Heteroepitaxial undoped ZnO films were grown on Si (100) substrates by radio-frequency reactive sputtering, and then some of the samples were annealed at N2-800℃ (Sample 1, S1) and 02-800℃ (Sample 2, S2) for 1 h, respectively. The electrical transport characteristics of a ZnO/p-Si heterojunction were investigated. We found two interesting phenomena. First, the temperature coefficients of grain boundary resistances of S 1 were positive (positive temperature coefficients, PTC) while that of both the as-grown sample and S2 were negative (negative temperature coefficients, NTC). Second, the I-V properties of S2 were similar to those common p-n junctions while that of both the as-grown sample and S 1 had double Schottky barrier behaviors, which were in contradiction with the ideal p-n heterojunction model. Combined with the deep level transient spectra results, this revealed that the concentrations of intrinsic defects in ZnO grains and the densities of interfacial states in ZnO/p-Si heterojunction varied with the different annealing ambiences, which caused the grain boundary barriers in ZnO/p-Si heterojunction to vary. This resulted in adjustment electrical properties ofZnO/p-Si heterojunction that may be suitable in various applications.