Size and temperature effects on electric properties of CdTe/ZnTe quantum rings
Size and temperature effects on electric properties of CdTe/ZnTe quantum rings作者机构:Department of Electronics EngineeringCatholic University of DaeguHayangKyeongbuk 712-702Korea
出 版 物:《Chinese Physics B》 (中国物理B(英文版))
年 卷 期:2011年第20卷第9期
页 面:450-455页
核心收录:
学科分类:080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术(可授工学、理学学位)] 07[理学] 070205[理学-凝聚态物理] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程(可授工学、理学学位)] 0702[理学-物理学]
基 金:Project supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) the Ministry of Education,Science,and Technology,Korea (Grant No.2010-0024703)
主 题:quantum ring eight-band k.p model finite-element method strain and temperatureeffects electronic structure
摘 要:The electronic properties of CdTe/ZnTe quantum rings (QRs) are investigated as functions of size and temperature using an eight-band strain-dependent k.p Hamiltonian. The size effects of diameter and height on the strain distributions around the QRs are studied. We find that the interband transition energy, defined as the energy difference between the ground electronic and the ground heavy-hole subbands, increases with the increasing QR inner diameter regardless of the temperature, while the interband energy decreases with the increasing QR height, This is attributed to the reduction of subband energies in both the conduction and the valence bands due to the strain effects. Our model, in the framework of the finite element method and the theory of elasticity of solids, shows a good agreement with the temperature-dependent photoluminescence measurement of the interband transition energies.