Effect of parameters on Si plasma emission in collinear double-pulse laser-induced breakdown spectroscopy

作     者：Fang-Fang Chen Xue-Jiao Su Wei-Dong Zhou 

作者机构：Key Laboratory of Optical Information Detection and Display Technology of Zhejiang Zhejiang Normal University Jinhua 321004 China 

出 版 物：《Frontiers of physics》 (物理学前沿（英文版）)

年 卷 期：2015年第10卷第5期

页      面：83-90页

核心收录：

学科分类：080901[工学-物理电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080401[工学-精密仪器及机械] 0804[工学-仪器科学与技术] 082701[工学-核能科学与工程] 0827[工学-核科学与技术] 0803[工学-光学工程] 

基　　金：This study was supported by the Na- tional Natural Science Foundation of China (Grant No. 61178034)  the Natural Science Foundation of Zhejiang Province (Grant No. LY14F050003)  and was partially supported by the Program for Innovative Research Team  Zhejiang Normal University  China 

主　　题：laser-induced breakdown spectroscopy collinear dual-pulse plasma emission intensity 

摘      要：Collinear dual-pulse laser-induced breakdown spectroscopy was carried out on Si crystal by using a pair of nanosecond Nd：YAG laser sources emitting at 1064 nm. The spectral intensities and signal- to-noise ratios of selected Si atomic and ionic lines were used to evaluate the optical emission. The optical emission intensity was recorded while varying the interpulse delay time and energy ratio of the two pulsed lasers. The effects of the data acquisition delay time on the line intensity and signal-to-noise ratio have been investigated as well. Based on the results, the optimal interpulse delay time, energy ratio of the two pulsed lasers, and data acquisition delay time for achieving the maximum atomic and ionic line intensities were found for generation of Si plasma with the collinear dual-pulse laser approach. The dominant mechanism for the observed line intensity variation was also discussed. In addition, the plasma temperature and electron number density at different gate delay times and different interpulse delay times were derived. A significant influence of plasma shielding on the electron temperature and electron number density at shorter interpulse delay times was observed.