Analysis on high speed response of a uni-traveling-carrier double hetero-junction phototransistor

作     者：江之韵 谢红云 张良浩 张万荣 胡瑞心 霍文娟 Jiang Zhi-Yun;Xie Hong-Yun;Zhang Liang-Hao;Zhang Wan-Rong;Hu Rui-Xin;Huo Wen-Juan

作者机构：College of Electronic Information and Control Engineering Beijing University of Technology 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2015年第24卷第4期

页      面：535-539页

核心收录：

学科分类：08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0704[理学-天文学] 

基　　金：Project supported by the National Natural Science Foundation of China(Grant No.61006044) the Natural Science Foundation of Beijing,China(Grant Nos.4122014 and 4142007) the Fund from the Beijing Municipal Education Committee,China(Grant No.KM200910005001) 

主　　题：uni-traveling-carrier double hetero-junction phototransistor optical responsivity optical transition frequency 

摘      要：In this paper, the positive influence of a uni-traveling-carrier （UTC） structure to ease the contract between the respon- sivity and working speed of the InP-based double hetero-junction phototransistor （DHPT） is illustrated in detail. Different results under electrical bias, optical bias or combined electrical and optical bias are analyzed for an excellent UTC-DHPT performance. The results show that when the UTC-DHPT operates at three-terminal （3T） working mode with combined electrical bias and optical bias in base, it keeps a high optical responsivity of 34.72 A/W and the highest optical transition frequency of 120 GHz. The current gain of the 3T UTC-DHPT under 1.55-μm light illuminations reaches 62 dB. This indicates that the combined base electrical bias and optical bias of 3T UTC-DHPT can make sure that the UTC-DHPT provides high optical current gain and high optical transition frequency simultaneously.