The electrical properties of sulfur-implanted cubic boron nitride thin films

作     者：邓金祥 秦扬 孔乐 杨学良 李廷 赵卫平 杨萍 

作者机构：College of Applied SciencesBeijing University of TechnologyBeijing 100124China 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2012年第21卷第4期

页      面：458-460页

核心收录：

学科分类：08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 

基　　金：supported by the National Natural Science Foundation of China (Grant Nos. 60876006 and 60376007) the Natural Science Foundation of Beijing, China (Grant No. 4072007) the Scientific Research Program of Beijing Municipal Commission of Education, China (Grant No.KM200910005018) the Scientific Research Foundation for the Returned Overseas Chinese Scholars, State Education Ministry, China the Funding Project for Academic Human Resources Development in Institutions of Higher Learning under the Jurisdiction of Beijing Municipality 

主　　题：cubic boron nitride ion implantation surface resistivity activation energy 

摘      要：Cubic boron nitride （c-BN） thin films are deposited on p-type Si wafers using radio frequency （RF） sputtering and then doped by implanting S ions. Wile implantation energy of the ions is 19 keV, and the implantation dose is between 1015 ions/cm2 and 1016 ions/cm2. The doped c-BN thin films are then annealed at a temperature between 400℃ and 800℃. The results show that the surface resistivity of doped and annealed c-BN thin films is lowered by two to three orders, and the activation energy of c-BN thin films is 0.18 eV.