Kondo effect in quantum dots and molecular devices

作     者：JIANG Lang LI Hongxiang HU Wenping ZHU Daoben 

作者机构：Institute of ChemistryChinese Academy of SciencesBeijing 100080China 

出 版 物：《Chinese Science Bulletin》 (Chin. Sci. Bull.)

年 卷 期：2005年第50卷第19期

页      面：2132-2139页

核心收录：

学科分类：08[工学] 0806[工学-冶金工程] 080601[工学-冶金物理化学] 

基　　金：This work was supported by the Chinese Academy of Sciences National Natural Science Foundation of China(Grant Nos.20421 101.204 02015& 20404013 and Ministry of Science and Technology of China 

主　　题：Kondo效应 量子点 Kondo温度 分子设备 磁性合金 

摘      要：Kondo effect is a very important many-body phenomenon in condensed matter physics,which explains why the resistance increases as the temperature is lowered (usually 10 K) in dilute magnetic alloy, and why the con-ductance increases as temperature is decreased in quantum dots. This paper simply introduces equilibrium and non- equilibrium Kondo effects in quantum dots together with the Kondo effect in quantum dots with even number of electrons (when the singlet and triplet states are degenerate). Fur-thermore, Kondo effect in single atom/molecular transistors is introduced, which indicates a new way to study Kondo effect.