X-ray Multiple Diffraction Topographic Imaging Technique For Growth History Study of Habit Modifying Impurity Doped Crystals

作     者：LAI X. MA C. K. J. Robert M. C. Miller 

作者机构：Institute of Particle Science and Engineering Department of Chemical Engineering University of LeedsInstitute of Particle Science and Engineering Department of Chemical Engineering University of LeedsInstitute of Particle Science and Engineering Department of Chemical Engineering University of LeedsCCLRC Daresbury Laboratory Daresbury Leeds LS2 9JT UKLeeds LS2 9JT UKLeeds LS2 9JT UKWarrington Cheshire WA4 4AD UK 

出 版 物：《Chemical Research in Chinese Universities》 (高等学校化学研究（英文版）)

年 卷 期：2004年第20卷第4期

页      面：411-416页

核心收录：

学科分类：07[理学] 070205[理学-凝聚态物理] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0703[理学-化学] 0702[理学-物理学] 

基　　金：Supported by EPSRC the UK Research Council(No. GRIR 6 5 787) 

主　　题：X-ray diffraction X-ray multiple diffraction X-ray topography Habit modification Crystal growth Growth defects 

摘      要：A novel crystal characterization instrument has been built up in which a combination of X-ray multiple diffraction and X-ray topography is applied to enabling the cross-correlation between micro-crystallographic symmetry and its spatial dependence in relation to lattice defects. This facility is used to examine, in a self-consistent manner, growth sector-dependant changes to both the crystallographic structure and the lattice defects associated with the action of habit-modifying additives in a number of representative crystal growth systems. In addition, the new instrument can be used to probe micro-crystallographic aspects(such as distortion to crystal symmetry) and relate these in a spatially resolved manner to the crystal defect structure in crystals doped with known habit modifiers.