EDESR and ODMR of Impurity Centers in Nanostructures Inserted in Silicon Microcavities

作     者：Nikolay T Bagraev Vladimir A. Mashkov Edward Yu Danilovsky Wolfgang Gehlhoff Dmitrii S. Gets Leonid E Klyachkin Andrei A Kudryavtsev Roman V. Kuzmin Anna M Malyarenko Vladimir V Romanov 

作者机构：不详 

出 版 物：《Journal of Modern Physics》 (现代物理（英文）)

年 卷 期：2011年第2卷第6期

页      面：544-558页

学科分类：1002[医学-临床医学] 100214[医学-肿瘤学] 10[医学] 

主　　题：Silicon Microcavity Quantum Well ESR Bound Exciton Trigonal Centers Single Centers Carbon ODMR 

摘      要：We present the first findings of the new electrically- and optically-detected magnetic resonance technique [ED electron spin resonance (EDESR) and (ODMR)] which reveal single point defects in the ultra-narrow silicon quantum wells (Si-QW) confined by the superconductor δ-barriers. This technique allows the ESR identification without the application of the external cavity as well as a high frequency source and recorder, with measuring the only magnetoresistance (EDESR) and transmission (ODMR) spectra within frameworks of the excitonic normal-mode coupling (NMC) caused by the microcavities embedded in the Si-QW plane. The new resonant positive magnetoresistance data are interpreted here in terms of the interference transition in the diffusive transport of free holes respectively between the weak antilocalization regime in the region far from the ESR of a paramagnetic point defect located inside or near the conductive channel and the weak localization regime in the nearest region of the ESR of that defect.