Novel types of photonic band crystal high power and high brightness semiconductor lasers

作     者：Md. Jarez MIAH Vladimir P. KALOSHA Ricardo ROSALES Dieter BIMBERG 

作者机构：Institute of Solid State Physics Technical University of Berlin Hardenbergstrasse 36 10623 Berlin Germany King Abdulaziz University Jeddah Kingdom of Saudi Arabia (KSA) 

出 版 物：《Frontiers of Optoelectronics》 (光电子前沿（英文版）)

年 卷 期：2016年第9卷第2期

页      面：225-237页

核心收录：

学科分类：080901[工学-物理电子学] 070207[理学-光学] 0809[工学-电子科学与技术（可授工学、理学学位）] 07[理学] 08[工学] 080401[工学-精密仪器及机械] 0804[工学-仪器科学与技术] 0803[工学-光学工程] 0702[理学-物理学] 

基　　金：support of the German Research Council (DFG) within CRC 787 

主　　题：semiconductor laser (SL) edge-emitting laser,high brightness laser narrow beam divergence high peakpower pulses 

摘      要：A novel type of high power edge-emitting semiconductor laser （SL） with extended vertical photonic band crystal （PBC） waveguide was reviewed. Simulations predict narrow beam divergence, resulting from the thick PBC waveguide, to be independent of realistic variations of the growth parameters. Narrow ridge lasers fabricated along the simulations indeed demonstrate superior output power, narrow beam divergence, circular beam profile, excellent beam quality and very low astigmatism. Efficient fiber coupling decisive for most applications was thus eased. Stability of the laser under a wide range of operating temperature was demonstrated. Ultrashort pulses with few ps of duration at GHz repetition rates were generated by passively mode locking the lasers.