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Structural Morphological and Optical Properties of SnSb_2S_4 Thin Films Grown by Vacuum Evaporation Method

Structural Morphological and Optical Properties of SnSb_2S_4 Thin Films Grown by Vacuum Evaporation Method

作     者:N.Khedmi M.Ben Rabeh M.Kanzari 

作者机构:Laboratoire de Photovoltaques et Matriaux de Semi-conducteurs-ENIT-Universit de Tunis el ManarBP 37le belvedere1002 TunisTunisie Laboratoire de Photovoltaques et Matriaux de Semi-conducteurs-ENIT-IPEITunis Montfleury-Universit de TunisTunisie 

出 版 物:《Journal of Materials Science & Technology》 (材料科学技术(英文版))

年 卷 期:2014年第30卷第10期

页      面:1006-1011页

核心收录:

学科分类:07[理学] 0817[工学-化学工程与技术] 0806[工学-冶金工程] 070205[理学-凝聚态物理] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程(可授工学、理学学位)] 0703[理学-化学] 0802[工学-机械工程] 0801[工学-力学(可授工学、理学学位)] 0702[理学-物理学] 

主  题:Ternary system Thermal evaporation technique Thin films Thickness Atomic force microscopy (AFM) 

摘      要:SnSb2S4 thin films were prepared from powder by thermal evaporation under vacuum of 1.33 × 10^-4 Pa ( 10^-6 Torr) on unheated glass substrates. The effect of thickness on the structural, morphological and optical properties of SnSb2S4 thin films was investigated. Films thickness measured by interference fringes method varied from 50 to 700 nm. X-ray diffraction analysis revealed that all the SnSb2S4 films were polycrystalline in spite without heating the substrates and the crystallinity was improved with increasing film thickness. The microstructure parameters: crystallite size, strain and dislocation density were calculated. It was observed that the crystallite size increased and the crystal defects decreased with increasing film thickness. In addition, by increasing the film thickness, an enhancement in the surface roughness root-mean-square (RMS) increased from 2.0 to 6.6 nm. The fundamental optical parameters like band gap, absorption and extinction coefficient were calculated in the strong absorption region of transmittance and reflectance spectrum. The optical absorption measurements indicated that the band (Eg) gap of the thin films decreased from 2.10 to 1.65 eV with increasing film thickness. The refractive indexes were evaluated in transparent region in terms of envelope method, which was suggested by Swanepoul. It was observed that the refractive index increased with increasing film thickness.

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