Identification of Grown-In Defects in CZ Silicon after Cu Decoration
Identification of Grown-In Defects in CZ Silicon after Cu Decoration作者机构：National Nano Device Laboratories National Applied Research Laboratories Taiwan Department of Materials Science and Engineering National Chiao Tung University Taiwan AUO Crystal Corporation Taiwan
出 版 物：《Microscopy Research》 (显微镜研究（英文）)
年 卷 期：2017年第5卷第2期
页 面：11-19页
学科分类：1002[医学-临床医学] 100214[医学-肿瘤学] 10[医学]
主 题：CZ Silicon Cu Decoration Microstructures Defects Transmission Electron Mi-croscopy
摘 要：Bulk Czochralski silicon crystals were decorated with Cu and characterized by transmission electron microscopy (TEM) with energy-dispersive spectroscopy (EDS), atomic force microscopy (AFM), optical microscopy (OM), scanning electron microscopy (SEM), and photoluminescence spectroscopy (PL). The vacancy-type core, oxidation-induced stacking faults (OISF) ring, nearly defect-free ring, and self-interstitial-type rich outer ring were delineated in the Si crystal wafer. At the surface of the Si crystal, vertical-horizontal line (V-H line) defects and windmill defects (W-defects) were formed instead of OISF. The families of growth planes and directions were expressed as {011} and for the V-H line and {010} and for W-defects, respectively. In addition to V-H line defects and W-defects, pits or voids and Si oxide with dissolved Cu were found in the Si crystal wafer.
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