Observation of Violet-Light Emission Band for Thulium-Doped Tantalum-Oxide Films Produced by Co-Sputtering
Observation of Violet-Light Emission Band for Thulium-Doped Tantalum-Oxide Films Produced by Co-Sputtering作者机构：Graduate School of Science and Technology Gunma University Kiryu Japan
出 版 物：《Materials Sciences and Applications》 (材料科学与应用期刊（英文）)
年 卷 期：2015年第6卷第7期
页 面：656-660页
主 题：Tantalum Oxide Thulium Co-Sputtering Violet-Light Emission Band
摘 要：We prepared thulium-doped tantalum (V) oxide (Ta2O5:Tm) thin films using co-sputtering of two Tm2O3 pellets and a Ta2O5 disc, and we observed photoluminescence (PL) peaks not only around a wavelength of 800 nm due to the 3H4→3H6 transition of Tm3+ but also around a wavelength of 400 nm (violet) from the films after annealing for the first time. Comparatively narrow PL peaks around the wavelength of 400 nm were observed from the films annealed at 800°C and 900°C for 20 min. The peak intensity from the film annealed at 900°C was approximately four-times stronger than that from the film annealed at 800°C. The origin of the 400-nm peaks seems to be the same as our non-doped Ta2O5 thin films deposited using radio-frequency sputtering because we observe PL peaks around 400 - 430 nm from the Ta2O5 films. Such a Ta2O5:Tm co-sputtered thin film seems to be used as a multi-functional coating film having both anti-reflection and down-conversion effects for realizing a high-efficiency silicon solar cell.
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