Investigating the interlayer electron transport and its in?uence on the whole electric properties of black phosphorus

作     者：Bensong Wan Shaoqiang Guo Jiacheng Sun Yufei Zhang Yuyan Wang Caofeng Pan Junying Zhang 

作者机构：Key Laboratory of Micro-nano Measurement Manipulation and Physics (Ministry of Education) School of Physics Beihang University CAS Center for Excellence in Nanoscience Beijing Key Laboratory of Micro-nano Energy and Sensor Beijing Institute of Nanoenergy and Nanosystems Chinese Academy of Sciences School of Nanoscience and Technology University of Chinese Academy of Sciences Center on Nanoenergy Research School of Physical Science and Technology Guangxi University College of Optoelectronic Engineering Shenzhen University 

出 版 物：《Science Bulletin》 (科学通报（英文版）)

年 卷 期：2019年第64卷第4期

页      面：254-260页

核心收录：

学科分类：07[理学] 08[工学] 

基　　金：supported by the National Key Research and Development from Minister of Science and Technology of China (2016YFA0202703) the National Natural Science Foundation of China (51622205, 61675027, 51432005, 61505010, 51672106, 11704081, and 51502018) Beijing City Committee of Science and Technology (Z171100002017019, and Z181100004418004) Beijing Natural Science Foundation (4181004, 4182080, 4184110, and 2184131) 

主　　题：Black phosphorus Transistor Transmission Vertical Variable temperature 

摘      要：Two-dimensional(2D) nanomaterials have attracted great attention in next generation electronic and optoelectronic technologies due to the unique layered structure and excellent physical and chemical properties. However, the mechanism of transmission along the vertical direction of 2D semiconductor materials has not been investigated. Here, we use first-principles calculations to explore the bandgap energies along different directions, and fabricate a vertical, a lateral and a mixture-structured black phosphorus field effect transistor(BPFET) to study the electrical characteristics along different directions under variable temperatures. The variable temperature test indicates that the mixture-structured device performs more like a lateral device, while the conductance along the vertical direction is hard to be tuned by temperature and electrical field. The unchanged conductance under electric field and variable temperatures allows the vertical device to act as a fixed resistor, promising possible application for the prospective electronic and optoelectronic devices.