Remote plasma-enhanced atomic layer deposition of gallium oxide thin films with NH_3 plasma pretreatment

作     者：Hui Hao Xiao Chen Zhengcheng Li Yang Shen Hu Wang Yanfei Zhao Rong Huang Tong Liu Jian Liang Yuxin An Qing Peng Sunan Ding 

作者机构：College of Materials Science and Engineering Taiyuan University of Technology Vacuum Interconnected Nanotech Workstation (Nano-X) Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO) Chinese Academy of Sciences (CAS) 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2019年第40卷第1期

页      面：91-97页

核心收录：

学科分类：0808[工学-电气工程] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0703[理学-化学] 0702[理学-物理学] 

基　　金：supported jointly by the National Natural Science Foundation of China(Nos.61674165,61604167,61574160,61704183,61404159,11604366) the Natural Science Foundation of Jiangsu Province(Nos.BK20170432,BK20160397,BK20140394) the National Key R&D Program of China(No.2016YFB0401803) the Strategic Priority Re-search Program of the Chinese Academy of Science(No.XDA09020401) the support at the Platform for Characterization&Test,Suzhou Institute of Nano-Tech and Nano-Bionics(SINANO),Chinese Academy of Sciences 

主　　题：Ga-oxide RPEALD passivation NH3 plasma 

摘      要：High quality gallium oxide(Ga_2O_3) thin films are deposited by remote plasma-enhanced atomic layer deposition(RPEALD) with trimethylgallium(TMG) and oxygen plasma as precursors. By introducing in-situ NH3 plasma pretreatment on the substrates, the deposition rate of Ga_2O_3 films on Si and GaN are remarkably enhanced, reached to 0.53 and 0.46 ?/cycle at 250 °C,respectively. The increasing of deposition rate is attributed to more hydroxyls(–OH) generated on the substrate surfaces after NH3 pretreatment, which has no effect on the stoichiometry and surface morphology of the oxide films, but only modifies the surface states of substrates by enhancing reactive site density. Ga_2O_3 film deposited on GaN wafer is crystallized at 250 °C, with an epitaxial interface between Ga_2O_3 and GaN clearly observed. This is potentially very important for reducing the interface state density through high quality passivation.