Photoluminescence of SiV centers in CVD diamond particles with specific crystallographic planes

作     者：Ying-Shuang Mei Cheng-Ke Chen Mei-Yan Jiang Xiao Li Yin-Lan Ruan Xiao-Jun Hu 梅盈爽;陈成克;蒋梅燕;李晓;阮银兰;胡晓君

作者机构：College of Materials Science and Engineering Zhejiang University of Technology ARC Centre of Excellence in Nanoscale Biophotonics Institute of Photonics and Advanced Sensing University of Adelaide 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2019年第28卷第1期

页      面：470-477页

核心收录：

学科分类：081702[工学-化学工艺] 08[工学] 0817[工学-化学工程与技术] 

基　　金：Project supported by the National Natural Science Foundation of China(Grant Nos.50972129 and 50602039) the International Science Technology Cooperation Program of China(Grant No.2014DFR51160) the National Key Research and Development Program of China(Grant No.2016YFE0133200) European Union’s Horizon 2020 Research and Innovation Staff Exchange(RISE)Scheme(Grant No.734578) One Belt and One Road International Cooperation Project from Key Research and Development Program of Zhejiang Province,China(Grant No.2018C04021) the Natural Science Foundation of Zhejiang Province,China(Grant No.LY18E020013) 

主　　题：diamond particle SiV center photoluminescence crystallographic planes 

摘      要：We prepared the isolated micrometer-sized diamond particles without seeding on the substrate in hot filament chemical vapor deposition. The diamond particles with specific crystallographic planes and strong silicon-vacancy(SiV) photoluminescence(PL) have been prepared by adjusting the growth pressure. As the growth pressure increases from 2.5 to 3.5 kPa,the diamond particles transit from composite planes of {100} and {111} to only smooth {111} planes. The {111}-faceted diamond particles present better crystal quality and stronger normalized intensity of SiV PL with a narrower bandwidth of 5 nm. Raman depth profiles show that the SiV centers are more likely to be formed on the near-surface areas of the diamond particles, which have poorer crystal quality and greater lattice stress than the inner areas. Complex lattice stress environment in the near-surface areas broadens the bandwidth of SiV PL peak. These results provide a feasible method to prepare diamond particles with specific crystallographic planes and stronger SiV PL.