Current transport mechanism of Mg/Au ohmic contacts to lightly doped n-type β-Ga_2O_3

作     者：Jianjun Shi Xiaochuan Xia Qasim Abbas Jun Liu Heqiu Zhang Yang Liu Hongwei Liang 

作者机构：School of Microelectronics Dalian University of Technology 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2019年第40卷第1期

页      面：87-90页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 07[理学] 070205[理学-凝聚态物理] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0702[理学-物理学] 

基　　金：supported by the National Key R&D Plan(Nos.2016YFB0400600,2016YFB0400601) the National Science Foundation of China(Nos.11675198,61376046,11405017,61574026) the Fundamental Research Funds for t he Central Universities(Nos.DUT15LK15,DUT15RC(3)016,NoDUT16LK29) the Liaoning Provincial Natural Science Foundation of China(Nos.2014020004,201602453,201602176) the China Postdoctoral Science Foundation Funded Project(No.2016M591434) the Open Fund of the State Key Laboratory on Integrated Optoelectronics(Nos.IOSKL2015KF18,IOSKL2015KF22) 

主　　题：Mg/Au beta-gallium oxide ohmic contact thermionic emission theory effective barrier height 

摘      要：The carrier transport mechanism of Mg/Au ohmic contact for lightly doped β-Ga_2O_3 is investigated. An excellent ohmic contact has been achieved when the sample was annealed at 400 °C and the specific contact resistance is 4.3 × 10-4 Ω·cm2. For the annealed sample, the temperature dependence of specific contact resistance is studied in the range from 300 to 375 K. The specific contact resistance is decreased from 4.3 × 10-4 to 1.59 × 10-4 Ω·cm2 with an increase of test temperature. As combination with the judge of E00, the basic mechanism of current transport is dominant by thermionic emission theory. The effective barrier height between Mg/Au and β-Ga_2O_3 is evaluated to be 0.1 eV for annealed sample by fitting experimental data with thermionic emission model.