Gain Properties of Triply-Doped Graphene-Insulator-Graphene Nanosheet Waveguide

作     者：KHUSHIK Muhammad Hanif Ahmed Khan JIANG Chun KHUSHIK Muhammad Hanif Ahmed Khan;姜淳

作者机构：State Key Laboratory of Advanced Optical Communication Systems and NetworksShanghai Jiao Tong University 

出 版 物：《Journal of Shanghai Jiaotong university(Science)》 (上海交通大学学报（英文版）)

年 卷 期：2019年第24卷第1期

页      面：7-11页

核心收录：

学科分类：070207[理学-光学] 07[理学] 0702[理学-物理学] 

基　　金：the National Natural Science Foundation of China(Nos.60377023 and 60672017) the Program for New Century Excellent Talents in Universities(NCET) the Shanghai Optical Science and Technology Project(No.05DZ22009) 

主　　题：nanosheet waveguide Er^(3+)-Tm^(3+)-Pr^(3+) gain medium 

摘      要：Er^(3+)-Tm^(3+)-Pr^(3+)triply-doped graphene-glass-graphene(GGG) nanosheet waveguide amplifier, which is a promising candidate for integrated photonic devices, is modelled and numerically analyzed. The designed waveguide is composed of a triply-doped tellurite glass core. The core is sandwiched between two graphene *** rate and power propagation equations of a heterogeneous multi-level laser medium are set up and solved numerically to study the effects of waveguide length and active ion concentrations on amplifier performance at five different input signal wavelengths(1.310, 1.470, 1.530, 1.600 and 1.650 μm). The analytical results show that rareearth ion dopant concentrations at an order of 10^(26) ion/m^3, waveguide length at 0.1 m and pump power at 100 m W can amplify 1.530 and 1.600 μm input signals with 1 μW power up to approximately 20.0 and 24.0 dB ***-difference time-domain(FDTD) simulation results show that mode field radius of GGG waveguide is smaller than that of silicon waveguide. Consequently, GGG waveguide with the same pump and signal power and the same gain-medium length can produce higher gain than silicon waveguide.