STOCHASTIC CRACKING AND HEALING BEHAVIORS OF THIN FILMS DURING REACTION-DIFFUSION GROWTH

作     者：S.L. Zhu, S.L. Yang, Y.M. Xiong, M.S. Li, S.J. Geng, C.S. Hu, Fuhui Wang and W.T. Wu (State Key Lab for Corrosion and Protection, Institute of Metal Research, The Chinese Academy of Sciences, Shenyang 110016, China) 

作者机构：Inst. of Metal Res. Chinese Acad. of Sci. Shenyang 110016 China 

出 版 物：《Acta Metallurgica Sinica(English Letters)》 (金属学报（英文版）)

年 卷 期：2001年第14卷第6期

页      面：544-548页

核心收录：

学科分类：08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 

基　　金：supported by Hundred-Talent Project of Chinese Academy of Sciences by the National Natural Science Foundation of China for Young Scientist 

主　　题：stochastic analysis reaction-diffusion growth oxide films 

摘      要：The stochastic cracking and healing behaviors of reaction-diffusion growth of thin filmswere studied by means of Markov processes analysis. We chose the thermal growth ofoxide scales on metals as an example of reaction-diffusion growth. The thermal growthof oxide films follows power law when no cracking occurs. Our results showed that thegrowth kinetics under stochastic cracking and healing conditions was different fromthat without cracking. It might be altered to either pseudo-linear or pseudo-power lawsdependent upon the intensity and frequency of the cracking of the films. When thehoping items dominated, the growth followed pseudo-linear law; when the diffusionalitems dominated, it followed pseudo-power law with the exponentials lower than theintrinsical values. The numerical results were in good agreement with the meassuredkinetics of isothermal and cyclic oxidation of NiAl-0.1 Y (at. %) alloys in air at 1273K.