GaAs pHEMT multi-band/multi-mode SP9T switch for quad-band GSM and UMTS handsets applications

作     者：Xiao-ying WANG Wen-ting GUO Yang-yang PENG Wen-quan SUI 

作者机构：Zhejiang California International Nanosystems Institute (ZCNI) Zhejiang University Hangzhou 310029 China 

出 版 物：《Journal of Zhejiang University-Science C(Computers and Electronics)》 (浙江大学学报C辑（计算机与电子（英文版）)

年 卷 期：2011年第12卷第4期

页      面：317-322页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0810[工学-信息与通信工程] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0812[工学-计算机科学与技术（可授工学、理学学位）] 

基　　金：supported by the National Natural Science Foundation of China (No.60971058) the Natural Science Foundation of Zhe-jiang Province,China (No.R107481) 

主　　题：GSM UMTS Single-pole nine-throw (SP9T) pHEMT Encoder DC boost 

摘      要：A multi-band/multi-mode single-pole nine-throw (SP9T) switch for GSM/UMTS (global system for mobile communications/universal mobile telecommunication system) systems is *** switch consists of a GaAs 0.5μm pseudomorphic high-electron mobility transistor (pHEMT) radio frequency (RF) switches module and Si complementary metal-oxide-semiconductor (COMS) digital module with an encoder and a DC boost *** isolation and high linearity are achieved by a series-shunt switch structure and the DC boost circuit,*** switch shows a measured insertion loss of 0.4 dB at 0.8 GHz for GSM transmit arms,0.7 dB at 0.9 GHz and 0.9 dB at 1.8 GHz for GSM receive arms,and 0.6 dB at 1.8 GHz for UMTS *** switch introduces 2nd and 3rd harmonic suppression levels less than 64 dBc at 37 dBm input *** between transmit and receive terminals are more than 48 dB when one transmit arm is *** size of the RF switches module is 1.5 mm×1.1 mm,and the size of the digital module is 1.3 mm×0.63 mm with gold bonding wires connecting these two modules.