Wet nitrogen oxidation technology and its anisotropy influence on VCSELs

作     者：Yan He Xiaoying He Shuai Hu Jiale Su Chong Li Anqi Hu Xia Guo 

作者机构：School of Electronic Engineering and State Key Laboratory of Information Photonics and Optical Communications Beijing University of Posts and Telecommunications Department of Information Beijing University of Technology 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2018年第39卷第12期

页      面：208-211页

核心收录：

学科分类：0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 

基　　金：Project supported by the National Natural Science Foundation of China(Nos.61335004,61675046,61505003) the Open Fund of IPOC2017B011(BUPT) 

主　　题：wet nitrogen oxidation vertical-cavity surface-emitting laser oxidation anisotropy 

摘      要：Vertical cavity surface emitting lasers（VCSELs） are widely used in optical communications and optical interconnects due to their advantages of low threshold, low power consumption and so on. Wet nitrogen oxidation technology, which utilizes H20 molecules to oxidize the Al;Ga;As, is used for electrical and optical mode confinement. In this paper, the effects of oxidation time, oxidation temperature and oxidation anisotropy on the oxidation rate are explored and demonstrated. The ratio of oxidation rate on [0-11] to [011] crystal orientation is defined as oxidation anisotropy coefficient, which decreases with the increase of oxidation temperature and oxidation time. In order to analyze the effect of the oxidation anisotropy on the VCSEL performance, an oxide-aperture of the VCSELs with two difference shapes is designed and then fabricated. The static performance of these fabricated VCSELs has been measured,whose threshold current ratio ～0.714 is a good agreement with that of the theoretical calculation value ～0.785. Our research on wet nitrogen oxidation and its anisotropy serves as an important reference in the batch fabrication of large-area VCSELs.