Effect of radio-frequency substrate bias on ion properties and sputtering behavior of 2 MHz magnetron sputtering

作     者：Min ZHU Chao YE Xiangying WANG Amin JIANG Su ZHANG 朱敏;叶超;王响英;蒋阿敏;张苏

作者机构：School of Physics Science and Technology Soochow University Key Laboratory of Thin Films of Jiangsu Province Soochow University Medical College Soochow University 

出 版 物：《Plasma Science and Technology》 (等离子体科学和技术（英文版）)

年 卷 期：2019年第21卷第1期

页      面：100-107页

核心收录：

学科分类：08[工学] 0827[工学-核科学与技术] 

基　　金：supported by National Natural Science Foundation of China (Nos. 11675118 and 11275136) 

主　　题：RF magnetron sputtering RF substrate bias ion property electric characteristic 

摘      要：The effect of radio-frequency substrate bias on ion properties and sputtering behavior of 2 MHz magnetron discharge was investigated. The ion velocity distribution function(IVDF), the maximum ion energy and ion flux density were measured at the substrate by a retarding field energy analyzer. The sputtering behavior was investigated by the electric characteristics of target and bias discharges using voltage–current probe technique. It was found that the substrate bias led to the decrease of sputtering power, voltage and current with the amplitude 7.5%. The substrate bias also led to the broadening of IVDFs and the increase of ion flux density, made the energy divergent of ions impacting the substrate. This effect was further enhanced by increasing bias power and reducing discharge pressure.