Influence of carrier gas H2 flow rate on quality of p-type GaN epilayer grown and annealed at lower temperatures

作     者：Shuang-Tao Liu Jing Yang De-Gang Zhao De-Sheng Jiang Feng Liang Ping Chen Jian-Jun Zhu Zong-Shun Liu Wei Liu Yao Xing Li-Yuan Peng Li-Qun Zhang Wen-Jie Wang Mo Li 刘双韬;杨静;赵德刚;江德生;梁锋;陈平;朱建军;刘宗顺;刘炜;邢瑶;彭莉媛;张立群;王文杰;李沫

作者机构：State Key Laboratory of Integrated OptoelectronicsInstitute of SemiconductorsChinese Academy of SciencesBeijing 100083China College of Materials Science and Opto-Electronic TechnologyUniversity of Chinese Academy of SciencesBeijing 100049China Center of Materials Science and Optoelectronics EngineeringUniversity of Chinese Academy of SciencesBeijing100049China Suzhou Institute of Nanotech and NanobionicsChinese Academy of SciencesSuzhou 215123China Microsystem&Terahertz Research CenterChinese Academy of Engineering PhysicsChengdu 610200China 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2018年第27卷第12期

页      面：499-503页

核心收录：

学科分类：07[理学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0704[理学-天文学] 0702[理学-物理学] 

基　　金：Project supported by the the Science Challenge Project of China(Grant No.TZ2016003) the National Natural Science Foundation of China(Grant Nos.61674138,61674139,61604145,61574135,61574134,61474142,and 61474110) Beijing Municipal Science and Technology Project(Grant No.Z161100002116037) 

主　　题：p-type GaN thermal annealing H atom state 

摘      要：In this work, we study the influence of carrier gas H2flow rate on the quality of p-type GaN grown and annealed at lower temperatures. It is found that the concentration of H atoms in Mg-doped GaN epilayer can effectively decrease with appropriately reducing the carrier gas H2flow rate, and a high-quality p-type GaN layer could be obtained at a comparatively low annealing temperature by reducing the carrier gas H2flow rate. Meanwhile, it is found that the intensity and wavelength of DAP peak are changed as the annealing temperature varies, which shows that the thermal annealing has a remarkable effect not only on the activation of acceptors but also on the compensation donors.