AlGaAs/GaAs quantum well infrared photodetector focal plane array based on MOCVD technology

作     者：Xianjie LI Yingbin LIU Zhen FENG Fan GUO Yonglin ZHAO Run ZHAO Rui ZHOU Chen LOU Shizu ZHANG 

作者机构：13th Institute of China Electronic Technology Group Corporation 

出 版 物：《Frontiers of Optoelectronics》 (光电子前沿(英文))

年 卷 期：2008年第1卷第Z2期

页      面：313-317页

学科分类：080901[工学-物理电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080401[工学-精密仪器及机械] 0804[工学-仪器科学与技术] 0803[工学-光学工程] 

基　　金：supported by the Electronic Supporting Foundation (No. 41501070402) 

主　　题：metal organic chemical vapor deposition (MOCVD) AlGaAs/GaAs quantum well infrared photo-detector (QWIP) infrared thermal images 

摘      要：128 × 128, 128 × 160 and 256 × 256 AlGaAs/GaAs quantum well infrared photodetector（QWIP） focal plane arrays（FPA） as well as a large area test device are designed and fabricated. The device with n-doped backilluminated AlGaAs/GaAs quantum structure is achieved by metal organic chemical vapor deposition（MOCVD）epitaxial growth and GaAs integrated circuit processing technology. The test device is valued by its dark current performance and Fourier transform infrared spectroscopy（FTIR） spectra at 77 K. Cut off wavelengths of 9 and10.9 μm are realized by using different epitaxial *** blackbody detectivity DB* is as high as 2.6 × 10～9cm·Hz1/2·W-1. The 128 × 128 FPA is flip-chip bonded on a CMOS readout integrated circuit with indium（In） *** infrared thermal images of some targets under room temperature background have been successfully demonstrated at 80 K operating temperature. In addition, the methods to further improve the image quality are discussed.