A wideband 0.13μm CMOS LC-VCO for IMT-advanced and UWB applications

作     者：唐欣 黄风义 唐旭升 邵明驰 

作者机构：RF & OEIC Research InstituteNational Mobile Communications Research LaboratorySoutheast University 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2013年第34卷第1期

页      面：83-88页

核心收录：

学科分类：080904[工学-电磁场与微波技术] 0808[工学-电气工程] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0703[理学-化学] 0702[理学-物理学] 

基　　金：Project supported by the National High Technology Research and Development Program of China (No.2009AA01Z261) the National Science and Technology Major Special Project(Nos.2009ZX03007-001,2012ZX03001-019) 

主　　题：LC VCO voltage controlled oscillator phase noise CMOS UWB IMT-advanced 

摘      要：This paper presents an LC voltage controlled oscillator（VCO） in a dual-band frequency synthesizer for IMT-advanced and UWB *** switched current source,cross-coupled pair and noise filtering technique are adopted in this VCO design to improve the performance of the phase noise,power consumption,voltage amplitude,and tuning *** order to achieve a wide tuning range,a reconfigurable LC tank with 4 bits switch control is adopted in the core circuit *** size of the entire chip with pad is 1.11 0.98 *** test results show that the current dissipation of the VCO at UWB and IMT-Advanced band is 3 mA and 4.5 mA in a 1.2 V *** tuning range of the designed VCO is 3.86-5.28 GHz and 3.14-3.88 *** phase-noise at 1 MHz frequency offset from a 3.5 GHz and 4.2 GHz carrier is-123 dBc/Hz and-119 dBc/Hz,respectively.