TEM study on Si_(0.65) Ge_(0.35) /p Si HIP infrared detector

作     者：Liu Ansheng(刘安生), Shao Beiling(邵贝羚), Liu Zheng(刘 峥), Wang Jing(王 敬) General Research Institute for Nonferrous Metals, Beijing 100088, P.R.China 

作者机构：Gen Res Inst NonFerrous Met Beijing 100088 Peoples R China 

出 版 物：《中国有色金属学会会刊：英文版》 (Transactions of Nonferrous Metals Society of China)

年 卷 期：1999年第9卷第3期

页      面：481-486页

核心收录：

学科分类：08[工学] 0803[工学-光学工程] 

基　　金：中国科学院资助项目(69576002) 

主　　题：infrared detector heterojunction semiconductor device microstructure of semiconductor device transmission electron microscopy 

摘      要：Microstructure of P + Si 0.65 Ge 0.35 /p Si HIP infrared detector has been studied by using localization cross section transmission electron microscopy. The photosensitive region of the detector consists of 6 P + Si 0.65 Ge 0.35 layers and 5 UD Si layers, which are flat and have thickness of 6 nm and 32 nm, respectively. A stress field exists on the interface between Si 0.65 Ge 0.35 and UD Si layers, but no any crystal defect has been found in this region, except the edges of this region. Both Si 0.65 Ge 0.35 and UD Si layers on amorphous SiO 2 layer consist of polycrystals and are in wave. There is defect area in the edges of photosensitive region. The area appears in a shape of inverse triangle and the maximum width is less than 120 nm. The crystal defects are stacking faults and microtwins.