Preparation,Characterization and Electronic Properties of Fluorine-doped Tin Oxide Films

作     者：Velázquez-Nevárez G A Vargas-García J R Lartundo-Rojas L CHEN Fei SHEN Qiang ZHANG Lianmeng 

作者机构：Deptartment of Materials and Metallurgical EngineeringNational Polytechnic Institute Nanosciences and Micro and Nanotechnology CenterNational Polytechnic Institute State Key Laboratory of Advanced Technology for Materials Synthesis and ProcessingWuhan University of Technology 

出 版 物：《Journal of Wuhan University of Technology(Materials Science)》 (武汉理工大学学报（材料科学英文版）)

年 卷 期：2016年第31卷第1期

页      面：48-51页

核心收录：

学科分类：081702[工学-化学工艺] 07[理学] 070205[理学-凝聚态物理] 08[工学] 0817[工学-化学工程与技术] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0702[理学-物理学] 

主　　题：tin oxide films fluorine doping energy band diagram 

摘      要：Tin oxide（SnO2） and fluorine doped tin oxide（FTO） films were prepared on glass substrates by sol-gel spin-coating using SnCl4 and NH4F *** doping concentration was fixed at 4 at%and 20 at%by controlling precursor sol *** exhibited the tetragonal rutile-type crystal structure regardless of fluorine *** and highly transparent FTO films,with more than 85%of optical transmittance,were obtained by annealing at 600℃.Florine doping of films was verified by analyzing the valence band region obtained by *** was found that the fluorine doping affects the shape of valence band of SnO2 *** addition,it was observed that the band gap of SnO2 is reduced as well as the Fermi level is upward shifted by the effect of fluorine doping.