Characterization of free carbon in the as-thermolyzed Si-B-C-N ceramic from a polyorganoborosilazane precursor

作     者：Adhimoolam Bakthavachalam KOUSAALYA Ravi KUMARa Shanmugam PACKIRISAMY 

作者机构：Materials Processing SectionDepartment of Metallurgical and Materials EngineeringIndian Institute of Technology MadrasChennai 600036Tamil NaduIndia Analytical Spectroscopy and Ceramics GroupPCM EntityVikram Sarabhai Space CentreThiruvananthapuram 695022India 

出 版 物：《Journal of Advanced Ceramics》 (先进陶瓷（英文）)

年 卷 期：2013年第2卷第4期

页      面：325-332页

核心收录：

学科分类：0808[工学-电气工程] 0809[工学-电子科学与技术（可授工学、理学学位）] 0817[工学-化学工程与技术] 08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0702[理学-物理学] 

基　　金：We gratefully acknowledge the financial support from the Vikram Sarabhai Space Centre Thiruvananthapuram through ISRO-IITM cell(Project No.ICSR/ISRO-IITM/MET/08-09/122/RAVK) 

主　　题：synthesis polyorganoborosilazane precursor-derived ceramic Si-B-C-N Raman spectroscopy free carbon 

摘      要：Polyorganoborosilazane((B[C_(2)H_(4)-Si(CH_(3))NH]_(3))n)was synthesized via monomer route from a single-source precursor and thermolyzed at 1300℃in argon *** as-thermolyzed Si-B-C-N ceramic was characterized using X-ray diffraction(XRD)and Raman *** crystallization behavior of silicon carbide in the as-thermolyzed amorphous Si-B-C-N matrix was understood by XRD studies,and the crystallite size calculated using Scherrer equation was found to increase from 2 nm to 8 nm with increase in dwelling ***,Raman spectroscopy was used to characterize the free carbon present in the as-thermolyzed *** peak positions,intensities and full width at half maximum(FWHM)of D and G bands in the Raman spectra were used to study and understand the structural disorder of the free *** G peak shift towards 1600 cm-1 indicated the decrease in cluster size of the free *** cluster diameter of the free carbon calculated using TK(Tuinstra and Koenl)equation was found to decrease from 6.2 nm to 5.4 nm with increase in dwelling time,indicating increase in structural disorder.