Simulation of the effect of quantum dot location on a quantum dot p-i-n junction solar cell
作者机构：Department of Solar EnergySchool of Technology Pandit Deendayal Petroleum UniversityRaisan Gandhinagar382007 GujaratIndia
出 版 物：《International Journal of Modeling, Simulation, and Scientific Computing》 (建模、仿真和科学计算国际期刊（英文）)
年 卷 期：2017年第8卷第4期
页 面：140-150页
核心收录：
学科分类：07[理学] 070201[理学-理论物理] 0702[理学-物理学]
基 金：PDPU
主 题：Photovoltaic quantum dot efficiency
摘 要：The investigation of the new generation of a photovoltaic cell for the optimized parameters is mainly carried out using modeling and simulation,because the fabrication of quantum structures is still a ***,new models to simulate realistic devices are *** the past,the Drift Diffusion equation has been exploited to simulate quantum well solar cells by introducing various assumptions and new *** Equilibrium Green Function’s Formalism has been widely used to study the transport in the nanostructures of the photovoltaic *** have developed a model of simulating quantum dot(QD)p-i-n junction solar cell by hybridizing the Drift Diffusion Equation and the Transfer Hamiltonian *** developed model is applied to a QD p-i-n junction solar cell to determine the optimized position of the QD within the intrinsic *** results show that when the QD is placed closer to the edges of the i-region,the highest possible efficiency is observed.
维普期刊数据库