Preparation of silicon carbide nitride films on Si substrate by pulsed high-energy density plasma

作     者：Xueming Li Size Yang Xingfang Wu 

作者机构：Material Science and Engineering School University of Science and Technology Beijing Beijing 100083 China Institute of Physics China Academy of Science Beijing 100080 China 

出 版 物：《Journal of University of Science and Technology Beijing》 (北京科技大学学报（英文版）)

年 卷 期：2006年第13卷第3期

页      面：272-276页

核心收录：

学科分类：08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 

主　　题：silicon carbide nitride pulsed high-energy density plasma chemical bonding state 

摘      要：Thin films of silicon carbide nitride （SiCN） were prepared on （111） oriented silicon substrates by pulsed high-energy density plasma （PHEDP）. The evolution of the chemical bonding states between silicon, nitrogen and carbon was investigated as a function of discharge voltage using X-ray photoelectron spectroscopy. With an increase in discharge voltage both the C 1s and N 1s spectra shift to lower binding energy due to the formation of C--Si and N--Si bonds. The Si--C--N bonds were observed in the deconvolved C ls and N ls spectra. The X-ray diffractometer （XRD） results show that there were no crystals in the films. The thickness of the films was approximately 1-2 μm with scanning electron microscopy （SEM）.