InAs-based interband cascade lasers at 4.0 μm operating at room temperature

作     者：Tian Yu Shuman Liu Jinchuan Zhang Bo Xu Lijun Wang Junqi Liu Ning Zhuo Shenqiang Zhai Xiaoling Ye Yonghai Chen Fengqi Liu Zhanguo Wang 

作者机构：Key Laboratory of Semiconductor Materials Science Institute of Semiconductors Chinese Academy of Sciences Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices College of Materials Science and Opto-Electronic Technology University of Chinese Academy of Sciences 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2018年第39卷第11期

页      面：36-39页

核心收录：

学科分类：080901[工学-物理电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080401[工学-精密仪器及机械] 0804[工学-仪器科学与技术] 0803[工学-光学工程] 

基　　金：Project supported by the National Natural Science Foundation of China(Nos.61790583,61774150,61774151) the National Basic Research Program of China(No.2014CB643903) 

主　　题：interband cascade laser InAs-based InAs/AlSb superlattice 

摘      要：InAs-based interband cascade lasers（ICLs） with InAs plasmon waveguides or InAs/AlSb superlattice（SL） waveguides were demonstrated at emission wavelengths below 4.1 μm. The threshold current densities of the lasers with SL waveguides were 37 A/cm;at 77 K in continuous wave mode. The operation temperature of these lasers reached room temperature in pulsed mode. Compared with the thick InAs n++ plasmon cladding layer, the InAs/AlSb superlattice cladding layers have greater advantages for ICLs with wavelengths less than 4 μm even in InAs based ICLs because in the short-wavelength region they have a higher confinement factor than InAs plasmon waveguides.