Scratch formation and its mechanism in chemical mechanical planarization (CMP)
作者机构：Department of Materials EngineeringHanyang UniversityAnsan 426-791Korea
出 版 物：《Friction》 (摩擦（英文版）)
年 卷 期：2013年第1卷第4期
页 面：279-305页
核心收录：
主 题：Chemical mechanical planarization(CMP) defects,scratch post-CMP cleaning defect source
摘 要：Chemical mechanical planarization(CMP)has become one of the most critical processes in semiconductor device fabrication to achieve global *** achieve an efficient global planarization for device node dimensions of less than 32 nm,a comprehensive understanding of the physical,chemical,and tribo-mechanical/chemical action at the interface between the pad and wafer in the presence of a slurry medium is *** the CMP process,some issues such as film delamination,scratching,dishing,erosion,and corrosion can generate defects which can adversely affect the yield and *** this article,an overview of material removal mechanism of CMP process,investigation of the scratch formation behavior based on polishing process conditions and consumables,scratch formation mechanism and the scratch inspection tools were extensively *** advantages of adopting the filtration unit and the jet spraying of water to reduce the scratch formation have been *** current research trends in the scratch formation,based on modeling perspective were also discussed.
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