Cellular automata modelling of phase-change memories

作     者：Wanhua Yu David Wright 

作者机构：School of Materials Science and Engineering University of Science and Technology Beijing Beijing 100083 China School of Engineering Computer Science and Mathematics The University of Exeter Exeter EX4 4QF UK 

出 版 物：《Journal of University of Science and Technology Beijing》 (北京科技大学学报（英文版）)

年 卷 期：2008年第15卷第4期

页      面：444-450页

核心收录：

学科分类：08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 

基　　金：The authors acknowledge the support of the EU Framework 5 programme in supporting this work un-der the auspices of the PC-RAM project (IST-2001-32557) 

主　　题：crystallization bchaviour cellular automation computer simulation memory data storage modelling phase change 

摘      要：A novel approach to modelling phase-transition processes in phase change materials used for optical and electrical data storage applications is presented. The model is based on a cellular automaton （CA） approach to predict crystallization behaviour that is linked to thermal and electrical simulations to enable the study of the data writing and erasing processes. The CA approach is shown to be able to predict the evolution of the microstructure during the rapid heating and cooling cycles pertinent to data storage technology, and maps crystallization behaviour on the nanoscale. A simple example based on possible future nonvolatile phase-change random access solid-state memory is presented.