A hybrid model for the charging process of the amorphous SiO_2 film in radio frequency microelectromechanical system capacitive switches

作     者：王立峰 黄庆安 唐洁影 廖小平 

作者机构：Key Laboratory of MEMS of the Ministry of EducationSoutheast University 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2011年第20卷第3期

页      面：426-432页

核心收录：

学科分类：08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 

基　　金：supported by the National Natural Science Foundation of China (Grant No. 60676043) 

主　　题：modeling polarisation charge injection amorphous SiO2 

摘      要：Charging is one of the most important reliability issues in radio frequency microelectro- mechanical systems （RF MEMS） capacitive switches since it makes the actuation voltage unstable. This paper proposes a hybrid model to describe the transient dielectric charging and discharging process in the defect-rich amorphous SiO2 RF MEMS capacitive switches and verifies experimentally. The hybrid model contains two parts according to two different charging mechanisms of the amorphous SiO2, which are the polarisation and charge injection. The models for polarisation and for charge injection are established, respectively. Analysis and experimental results show that polarisation is always effective, while the charge injection has a threshold electric field to the amorphous SiO2 film. Under different control voltage conditions, the hybrid model can accurately describe the experimental data.