Analytical Study on Piezoelectric Effects on Exciton Dissociation
作者机构:The Office of the Theory&Modeling Based Design of Energy Harvesting(private lab)Maetan 3-dongYeongtong-guSuwon-siGyeonggi-do 443-373Korea Department of ChemistryKorea Advanced Institute of Science and TechnologyDaejeon 305-701Korea Photo-Electronic Hybrids Research CenterKorea Institute of Science and TechnologySeoul 136-791Korea CAEPlatform Technology LabSamsung Advanced Institute of Technology
出 版 物:《Communications in Computational Physics》 (计算物理通讯(英文))
年 卷 期:2016年第20卷第6期
页 面:179-187页
核心收录:
学科分类:080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术(可授工学、理学学位)] 07[理学] 070205[理学-凝聚态物理] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程(可授工学、理学学位)] 0702[理学-物理学]
基 金:This research was supported by the Office of the Theory&Modeling Based Design of Energy Harvesting Korea
主 题:Exciton dissociation Onsager rate piezoelectric p-n junction recombination
摘 要:We analytically and numerically compute the Onsager dissociation rate(exciton dissociation)on an interface induced by a piezoelectric potential in an inorganicorganic hybrid p-n junction system(ZnO+(poly(p-phenylene vinylene));PPV).When a positive piezoelectric potential is created at the interface region owing to the deformation of the system,free electrons accumulate at the ***,screening effects are *** is assumed that the electron layer formed at the interface then attracts free holes from the p-type PPV region,which leads to exciton formation,possibly via the Langevin recombination *** increased exciton density can then contribute to the Onsager dissociation rate,which is maximum around the *** paper focuses on the role of piezoelectric effects in promoting exciton formation at the interface and its relation with the exciton dissociation rate.