The melilite-type compound (Sr_(1-x),A_x)_2MnGe_2S_6O(A=K,La) being a room temperature ferromagnetic semiconductor

作     者：Huan-Cheng Yang Ben-Chao Gong Kai Liu Zhong-Yi Lu 

作者机构：Department of Physics and Beijing Key Laboratory of Opto-electronic Functional Materials & Micro-nano Devices Renmin University of China Beijing 100872 China 

出 版 物：《Science Bulletin》 (科学通报（英文版）)

年 卷 期：2018年第63卷第14期

页      面：887-891页

核心收录：

学科分类：08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 

基　　金：supported by the National Key Research and Development Program of China(2017YFA0302903) the National Natural Science Foundation of China(11774422 and 11774424) 

主　　题：房间温度 铁磁性 半导体 混合物 类型 La 居里温度 高温度 

摘      要：The seeking of room temperature ferromagnetic semiconductors, which take advantages of both the charge and spin degrees of freedom of electrons to realize a variety of functionalities in devices integrated with electronic, optical, and magnetic storage properties, has been a long-term goal of scientists and engineers. Here, by using the spin-polarized density functional theory calculations, we predict a new series of high temperature ferromagnetic semiconductors based on the melilite-type oxysulfide Sr_2MnGe_2S_6O through hole(K) and electron(La) doping. Due to the lack of strong antiferromagnetic superexchange between Mn ions, the weak antiferromagnetic order in the parent compound Sr_2MnGe_2S_6O can be suppressed easily by charge doping with either p-type or n-type carriers, giving rise to the expected ferromagnetic order. At a doping concentration of 25%, both the hole-doped and electron-doped compounds can achieve a Curie temperature(T_c) above 300 K. The underlying mechanism is analyzed.Our study provides an effective approach for exploring new types of high temperature ferromagnetic semiconductors.