Fast patterning and dry-etch of SiN_x for high resolution nanoimprint templates

作     者：疏珍 万景 陆冰睿 谢申奇 陈宜方 屈新萍 刘冉 

作者机构：State Key Laboratory of ASIC and System Department of Microelectronics Fudan University Micro and Nanotechnology Centre Rutherford Appleton Laboratory Chilton Didcot Oxon OX11 0QX UK 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2009年第30卷第6期

页      面：138-141页

核心收录：

学科分类：0808[工学-电气工程] 081704[工学-应用化学] 0809[工学-电子科学与技术（可授工学、理学学位）] 07[理学] 08[工学] 0817[工学-化学工程与技术] 0805[工学-材料科学与工程（可授工学、理学学位）] 0703[理学-化学] 070301[理学-无机化学] 0702[理学-物理学] 

基　　金：supported by the National High Technology Research and Development Program of China(No.2006AA03Z352) the Science and Technology Commission of Shanghai (No. 08QH14002) the Seed Funding for Key Project by Ministry of Education the '985'Micro/Nanoelectronics Science and Technology Innovation Platform 

主　　题：SiNx templates nanoimprint NEB-22 electron bean lithography reactive ion etch 

摘      要：We developed a simplified nanofabrication process for imprint templates by fast speed electron beam lithography（EBL） and a dry etch technique on a SiNx substrate,intended for large area *** this end,the highly sensitive chemically amplified resist（CAR）,NEB-22,with negative tone was *** EBL process first defines the template pattern in NEB-22,which is then directly used as an etching mask in the subsequent reactive ion etching（RIE） on the SiNx to form the desired *** properties of both e-beam lithography and dry etch of NEB-22 were carefully studied,indicating significant advantages of this process with some drawbacks compared to when Cr was used as an etching ***,our results open up a good opportunity to fabricate high resolution imprint templates with the prospect of wafer scale manufacturing.