Black phosphorus-based field effect transistor devices for Ag ions detection

作     者：王慧德 David K Sang 郭志男 曹睿 赵劲来 Muhammad Najeeb Ullah Shah 范涛健 范滇元 张晗 Hui-De Wang;David K Sanf;Zhi-Nan Guo;Rui Cao;Jin-Lai Zhao;Muhammad Najeeb Ullah Shah;Tao-Jian Fan Dian-Yuan Fanl;Han Zhang

作者机构：Shenzhen Key Laboratory of Two-Dimensional Materials and Devices Shenzhen Engineering Laboratory of Phosphorene and OptoelectronicsSZU-NUS Collaborative Innovation Center for Optoelectronic Science & Technology College of Optoelectronic EngineeringShenzhen University Faculty of Information Technology Macao University of Science and Technology 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2018年第27卷第8期

页      面：35-41页

核心收录：

学科分类：07[理学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0704[理学-天文学] 0702[理学-物理学] 

基　　金：Project support by the National Natural Science Foundation of China(Grant Nos.61605131 and 61435010) the Shenzhen Science and Technology Research Fund,China(Grant No.JCYJ20150324141711624) 

主　　题：black phosphorus semiconductor devices chemical sensing witnessed inspections 

摘      要：Black phosphorus （BP）, an attractive two-dimensional （2D） semiconductor, is widely used in the fields of optoelec- tronic devices, biomedicine, and chemical sensing. Silver ion （Ag＋）, a commonly used additive in food industry, can sterilize and keep food fresh. But excessive intake of Ag＋ will harm human health. Therefore, high sensitive, fast and simple Ag＋ detection method is significant. Here, a high-performance BP field effect transistor （FET） sensor is fabricated for Ag＋ detection with high sensitivity, rapid detection speed, and wide detection concentration range. The detection limit for Ag＋ is 10 l0 mol/L. Testing time for each sample by this method is 60 s. Besides, the mechanism of BP-FET sensor for Ag＋ detection is investigated systematically. The simple BP-FET sensor may inspire some relevant research and potential applications, such as providing an effective method for the actual detection of Ag＋, especially in wimessed inspections field of food.