A novel model of photo-carrier screening effect on the GaN-based p-i-n ultraviolet detector

作     者：GAO Bo,LIU HongXia,KUANG QianWei,ZHOU Wen & CAO Lei School of Microelectronics,Xidian University,Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices,Xi’an 710071,China 

作者机构：School of Microelectronics Xidian University Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices Xi’an China 

出 版 物：《Science China(Physics,Mechanics & Astronomy)》 (中国科学：物理学、力学、天文学（英文版）)

年 卷 期：2010年第53卷第5期

页      面：793-801页

核心收录：

学科分类：08[工学] 080401[工学-精密仪器及机械] 0804[工学-仪器科学与技术] 080402[工学-测试计量技术及仪器] 0805[工学-材料科学与工程（可授工学、理学学位）] 0704[理学-天文学] 

基　　金：supported by the National Natural Science Foundation of China (Grant Nos. 60976068 and 60936005) the Cultivation Fund of the Key Scientific and Technical Innovation Project the Ministry of Education of China Program (Grant No. 708083) 

主　　题：GaN p-i-n ultraviolet detector photo-carrier screening effect 

摘      要：The photo-carrier density in the depletion region of the GaN-based p-i-n ultraviolet(UV) detector is calculated by solving the photo-carrier continuity equation,and the photo-carrier screening electric field is calculated according to Poisson s *** the numerical calculation method,a novel model of photo-carrier screening effect is *** the influence of photo-carrier screening effect on the distribution of photo-carrier density in the depletion region of p-i-n detector is *** influence of incident power,bias voltage and carrier life time on the photo-carrier screening effect is also *** is concluded that the influence of photo-carrier screening effect on the performance of GaN-based p-i-n UV detector is non-monotone,the maximum of carrier drift velocity and the minimum of response time can be realized by adjusting the applied ***,the incident light duration has strong impact on the photo-carrier screening effect.