Gray codes over certain run-length sequences for local rank modulation
Gray codes over certain run-length sequences for local rank modulation作者机构:National Computer Network Emergency Response Technical Team The Chern Institute of Mathematics and LPMC Nankai University
出 版 物:《Science China(Information Sciences)》 (中国科学:信息科学(英文版))
年 卷 期:2018年第61卷第10期
页 面:98-113页
核心收录:
学科分类:08[工学] 081201[工学-计算机系统结构] 0812[工学-计算机科学与技术(可授工学、理学学位)]
基 金:supported by National Basic Research Program of China (973) (Grant No. 2013CB834204) National Natural Science Foundation of China (Grant No. 61571243)
主 题:flash memory local rank modulation Gray codes rank modulation run-length sequences
摘 要:In the local rank modulation(LRM) scheme, a sliding window produces a sequence of permutations by moving over a sequence of variables. LRM has been presented as a method of storing data in flash memory, which represents a natural generalization of the classical rank modulation scheme. In this paper, we present a study on Gray codes over certain run-length sequences for the(1, 2, n)-LRM scheme to simulate virtual multilevel flash memory cells while maintaining the advantages of LRM. Unlike previous studies on the LRM scheme, we present Gray codes over certain run-length sequences in the(1, 2, n)-LRM scheme. This class of Gray codes can overcome the drawback of the many distinct charge levels required in the rank modulation scheme and in certain Gray codes for LRM. Furthermore, we demonstrate that the proposed codes have an asymptotically optimal rate.