Black phosphorus-based field effect transistor devices for Ag ions detection
Black phosphorus-based field effect transistor devices for Ag ions detection作者机构:Shenzhen Key Laboratory of Two-Dimensional Materials and DevicesShenzhen Engineering Laboratory of Phosphorene and OptoelectronicsSZU-NUS Collaborative Innovation Center for Optoelectronic Science & TechnologyCollege of Optoelectronic EngineeringShenzhen UniversityShenzhen 518060China Faculty of Information TechnologyMacao University of Science and TechnologyMacaoChina
出 版 物:《Chinese Physics B》 (中国物理B(英文版))
年 卷 期:2018年第27卷第8期
页 面:35-41页
核心收录:
学科分类:07[理学] 0805[工学-材料科学与工程(可授工学、理学学位)] 0704[理学-天文学] 0702[理学-物理学]
基 金:Project support by the National Natural Science Foundation of China(Grant Nos.61605131 and 61435010) the Shenzhen Science and Technology Research Fund,China(Grant No.JCYJ20150324141711624)
主 题:black phosphorus semiconductor devices chemical sensing witnessed inspections
摘 要:Black phosphorus (BP), an attractive two-dimensional (2D) semiconductor, is widely used in the fields of optoelec- tronic devices, biomedicine, and chemical sensing. Silver ion (Ag+), a commonly used additive in food industry, can sterilize and keep food fresh. But excessive intake of Ag+ will harm human health. Therefore, high sensitive, fast and simple Ag+ detection method is significant. Here, a high-performance BP field effect transistor (FET) sensor is fabricated for Ag+ detection with high sensitivity, rapid detection speed, and wide detection concentration range. The detection limit for Ag+ is 10 l0 mol/L. Testing time for each sample by this method is 60 s. Besides, the mechanism of BP-FET sensor for Ag+ detection is investigated systematically. The simple BP-FET sensor may inspire some relevant research and potential applications, such as providing an effective method for the actual detection of Ag+, especially in wimessed inspections field of food.