Sputtered gold nanoparticles enhanced quantum dot light-emitting diodes
Sputtered gold nanoparticles enhanced quantum dot light-emitting diodes作者机构:Department of Physics Beijing Institute of Technology Department of Materials Science and Engineering Beijing Institute of Technology Department of Physics Jilin University
出 版 物:《Chinese Physics B》 (中国物理B(英文版))
年 卷 期:2018年第27卷第8期
页 面:19-24页
核心收录:
基 金:Project supported by the National Natural Science Foundation of China(Grant Nos.21603012 61735004 and 61722502)
主 题:gold nanoparticles plasmonic effect quantum dots light-emitting diodes
摘 要:Surface plasmonic effects of metallic particles have been known to be an effective method to improve the perfor- mances of light emitting didoes. In this work, we report the sputtered Au nanoparticles enhanced electroluminescence in inverted quantum dot light emitting diodes (ITO/Au NPs/ZnMgO/QDs/TFB/PEDOT:PSS/A1). By combining the time- resolved photoluminescence, transient electroluminescence, and ultraviolet photoelectron spectrometer measurements, the enhancement of the internal field enhanced exciton coupling to surface plasmons and the electron injection rate increasing with Au nanoparticles' incorporation can be explained. Phenomenological numerical calculations indicate that the electron mobility of the electron transport layer increases from 1.39 ×10-5 cm2/V-s to 1.91 ×10-5 cm2/V-s for Au NPs modified device. As a result, the maximum device luminescence is enhanced by 1.41 fold (from 14600 cd/cm2 to 20720 cd/cm2) and maximum current efficiency is improved by 1.29 fold (from 3.12 cd/A to 4.02 cd/A).