Dependence of Quantum Yields on Size of Ag Nano-particle Embedded in BaO Thin Film

作     者：CAIWu－de YANGYi－bing 等 

作者机构：Dept.ofPhysYunnanNormalUniversityKunming650092CHN CollegeofArmedPoliceFrontierDefenceCommandinKunmingKunming650214CHN 

出 版 物：《Semiconductor Photonics and Technology》 (半导体光子学与技术（英文版）)

年 卷 期：2002年第8卷第1期

页      面：27-31页

学科分类：080901[工学-物理电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 07[理学] 070205[理学-凝聚态物理] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0702[理学-物理学] 

基　　金：FoundationofYunnanEducationCommittee(No .0 1112 39) 

主　　题：quantum yield ag nano-prticles ultrafast nonlinear response 

摘      要：Theoretical dependence of the quantum yields on the size of Agnano-particle distribution from 0.8 nm to 37 nm embedded in BaOsemiconductor is discussed. The calculation results show that theincrease in Ag nano-particle diameter leads to the increase of thequantum yield threshold and the emergence of the rough Gaussian form,the results also shown that the greater increase in Ag nano-particlediameter causes the emergence of the exact Gaussian form and makesthe peaks rise up.