Effect of flash thermal annealing by pulsed current on rotational anisotropy in exchange-biased NiFe/FeMn film

作     者：Zhen Wang Shi-Jie Tan Jun Li Bo Dai Yan-Ke Zou 王振;谭士杰;李俊;代波;邹延珂

作者机构：State Key Laboratory Cultivation Base for Nonmetal Composites and Functional MaterialsSouthwest University of Science and TechnologyMianyang 621010China The 9th Institute of China Electronics Technology Group CorporationMianyang 621000China 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2018年第27卷第8期

页      面：543-548页

核心收录：

学科分类：07[理学] 0702[理学-物理学] 

基　　金：Project supported by the Young Science and Technology Innovation Team of Sichuan Province China(Grant No.2017TD0020) 

主　　题：rapid annealing sputtering pulsed current rotational anisotropy 

摘      要：In this paper, Ta/[NiFe（15 nm）/FeMn（10 nm）]/Ta exchange-biased bilayers are fabricated by magnetron sputtering, and their static and dynamic magnetic properties before and after rapid annealing treatment with pulsed current are charac- terized by using a vibrating sample magnetometer （VSM） and a vector network analyzer （VNA）, respectively. The exchange bias field He and static anisotropy field Hksta decrease from 118.45 Oe （10e = 79.5775 A.m-1） and 126.84 Oe at 0 V to 94.75 Oe and 102.31 Oe at 90 V, respectively, with increasing capacitor voltage, which supplies pulsed current to heat the sample. The effect of flash thermal annealing by pulsed current on the rotational anisotropy （Hrot）, the difference value between static and dynamic magnetic anisotropy, is investigated particularly. The highest Hrot is obtained in the sample annealing with 45-V capacitor （3300 μF） voltage. According to the anisotropic magnetoresistance measurements, it can be explained by the fact that the temperature of the sample is around the blocking temperature of the exchange bias system （Tb） at 45 V, the critical temperature where the formation of more unstable antiferromagnetic grains occurs.