Frequency stability of an RF oscillator with an MEMS-based encapsulated resonator

作     者：彭波华 骆伟 赵继聪 袁泉 杨晋玲 杨富华 

作者机构：Institute of SemiconductorsChinese Academy of Sciences State Key Laboratory of Transducer Technology 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2015年第36卷第7期

页      面：103-107页

核心收录：

学科分类：080904[工学-电磁场与微波技术] 0808[工学-电气工程] 080802[工学-电力系统及其自动化] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0703[理学-化学] 0702[理学-物理学] 

基　　金：Project supported by the National Natural Science Foundation of China(Nos.61234007,61404136) the State Key Development Program for Basic Research of China(Nos.2011CB933102,2013YQ16055103) 

主　　题：MEMS disk resonator oscillator phase noise frequency stability encapsulation 

摘      要：This paper presents a high-Q RF MEMS oscillator consisting of a micro-disk resonator and low noise feedback circuits. The oscillator has high frequency stability and low phase noise. The two-port resonator was hermetically encapsulated using low-cost Sn-rich Au-Sn solder bonding, which significantly improves the frequency stability. A low noise oscillator circuit was designed with a two-stage amplifying architecture which effectively improves both the frequency stability and phase noise performance. The measured phase noise is -96 dBc/Hz at 1 kHz offset and-128 dBc/Hz at far-from-carrier offsets. Moreover, the medium-term frequency stability and Allan deviation of the oscillator are 4-4 ppm and 10 ppb, respectively. The oscillator is a promising component in future wireless communication application.